Browsing by Subject "ATR-FTIR"

Raman and infrared (IR) spectroscopy are the pillars of vibrational spectroscopic techniques. the chemical and structural information obtained by those techniques is valuable for many application areas, including developing thin film structures where it is required to confirm the chemical identity and crystalline phase produced by the deposition technique in use. In this thesis, Raman spectroscopy and attenuated total internal reflection Fourier transform infrared spectroscopy (ATR-FTIR) are used for the analysis of thin films deposited by atomic layer deposition (ALD) and aimed at various applications. The first case study is doped iron-oxide thin films aimed at photoelectrochemical electrodes; their Raman spectra confirm that the ALD-deposited films contain hematite-phase thin films with no interference from other polymorphs. Additionally, the Ti dopant incorporation in the hematite lattice has been shown. Tris(8-hydroxyquinolinato) aluminum (Alq3) films grown on various surfaces were analyzed with Raman and ATR-FTIR spectroscopy; comparing the spectra on different surfaces gave insight into the consistency of the deposition processes used and how the substrate can affect the quality of their spectrum. Lastly, the structural variation of hafnium oxide, zirconium oxide, and Hf0.5Zr0.5O2 films deposited by ALD has been studied and compared with respect to variation of film thickness, demonstrating the evolution of crystallinity with varying thickness and showing how the phase of the ternary oxide can resemble an intermediate of its binary counterparts