Browsing by Subject "sputtering"
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(2022)In this thesis, sputtering of several low- and high-index tungsten surface crystal directions are investigated. The molecular dynamics study is conducted using the primary knock-on atom method, which allows for an equal energy deposition for all surface orientations. The energy is introduced into the system on two different depths, on the surface and on a depth of 1 nm. Additionally to the sputtering yield of each surface orientation, the underlying sputtering process is investigated. Amorphous target materials are often used to compare sputtering yields of polycrystalline materials with simulations. Therefore, an amorphous surface is also investigated to compare it's sputtering yield and process with crystalline surface orientations. When the primary knock-on atom was placed on the surface all surface orientations had a cosine shaped angular distribution with little variation in the sputtering yield for most of the surface orientations. Linear collision sequences were observed to have a large impact on the sputtering yield when the energy was introduced deeper inside the material. In these linear collision sequences the recoils are traveling along the most close packed atom rows in the material. The distance from the origin of the collision cascade to the surface in the direction of the most close packed row is therefore crucial for the sputtering yield of the surface. Surface directions with high angles between this direction and the surface normal hence show a reduction in the sputtering yield. The amorphous material had a little lower sputtering yield than the crystalline materials when the primary knock-on atoms was placed on the surface whereas the difference rose into several orders of magnitude when the energy was given at 1 nm. It is impossible for linear collision sequences to propagate long distances in the amorphous material and therefore the angular distribution in both cases is cosine shaped. The amorphous material has no long range order and was therefore unable to reproduce the linear collision sequences, which are characteristic for the crystalline materials. The difference in the sputtering yield was hence up to several orders of magnitude as a result when the energy was introduced at 1 nm depth.
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(2022)Aluminium nitride is a piezoelectric material commonly used in piezoelectric microelectromechanical systems (MEMS) in the form of thin films deposited by sputtering. AlN-based devices are found in wireless electronics in the form of acoustic filters, but they also have prospective applications in a wide variety of sensor systems. To enhance the piezoelectric properties of AlN, some of the Al can be replaced with scandium, which is required for next-generation devices. However, addition of Sc makes both the deposition and patterning of the film more difficult. This work focuses on patterning of AlN and Sc0.2Al0.8N thin films with wet etching. Both materials are etched anisotropically, which in theory enables etching the materials with little deviation from the mask dimensions. However, in practise, undercutting at the mask edges occurs easily making the structures narrower compared to the etch mask. This work investigates and compares the mechanisms and etch rates of AlN and Sc0.2Al0.8N. Tetramethyl ammonium hydroxide was mostly used for etching, but also H3PO4 and H2SO4 were tested. Addition of 20 atom-% Sc lowered the etch rate of the material and resulted in more undercutting. The causes behind mask undercutting were examined by using 11 differently deposited etch masks, and the undercutting was minimized by optimizing the mask deposition, using thermal annealing, and optimizing the etching temperature. Finally, the work identifies and discusses the relevant factors in depositing and patterning the AlN, ScxAl1-xN and mask films.
Now showing items 1-2 of 2